The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 29, 1990

Filed:

May. 31, 1988
Applicant:
Inventors:

Kanji Sugihara, Gotenba, JP;

Motohiro Yamamoto, Gotenba, JP;

Tohru Kida, Gotenba, JP;

Minoru Fukazawa, Gotenba, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427215 ; 427228 ; 501 89 ; 501 92 ;
Abstract

Disclosed are surface-coated SiC whiskers, proceses for preparing the same, a ceramic reinforced with the same, and a process for preparing said reinforced ceramic. The surface-coated SiC whiskers are SiC whiskers (I) having a surface coated with a thin carbonaceous layer having a thickness of 7 to 100 .ANG., or SiC whiskers (II) having a surface coated with an Si.sub.3 N.sub.4 layer. The SiC whiskers (I) can be prepared by dispersing SiC whiskers in a homogeneous solution of a thermosetting resin in an organic solvent, separating the whiskers by filtration and drying it, curing the thermosetting resin, and firing the cured thermosetting resin in a non-oxidizing atmoshpere at 800.degree. to 1,600.degree. C. The SiC whiskers (II) can be prepared by dispersing SiC whiskers in a solution of an organosilicon polymer in an organic solvent, separating the whiskers by filtration and drying it, heating the whiskers coated with the organosilicon polymer in a nitriding atmoshpere at 1,200.degree. to 1,600.degree. C. A ceramic reinforced with the SiC whiskers (I) or (II) is obtained by mixing a ceramic powder with the SiC whiskers (I) or (II) and sintering the mixed powder in an inert atmosphere or in vacuo.


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