Error correction check during write cycles

Abstract

An error correcting check of a memory system is provided when a memory in which the Dynamic Random Access Memory (DRAM) is of the type which has input lines that are directly coupled to its output lines. Utilizing this type of DRAM, the memory system employs controls, input, output and read circuitry to read bits out of the memory via the output circuitry and write circuitry to write bits into the memory via the input circuitry. An error checking and correction circuit is coupled to the output means which includes a check bit generator and a syndrome generator, and a control means energizes the error checking and correcting means during the write cycle, as well as the read cycle, so that the errors are detected during the write cycle as well as the read cycle. In this manner, errors which occur in circuitry other than the memory, which includes the memory driving and reading logic and also the check bit generator logic translators and syndrome generators, may be separately detected from memory errors.