Bipolar static ram having two wiring lines for each word line

Abstract

There is implemented memory cells and corresponding signal lines associated therewith in bipolar type static random access memories employing wirings of multi-layer construction for transmitting a common signal therethrough such as with respect to the individual word lines. The word lines implemented are formed from at least a pair of stacked conductive layers of a material whose principal component is aluminum and which layers have interposed therebetween an insulating film. The pair of layers form a pair of wiring lines corresponding together to a word line and wherein the wiring lines are, furthermore, interconnected at predetermined intervals along the lengths thereof. This leads to the ability to decrease the chip size of semiconductor integrated circuits noting that a decrease in the voltage drop of a signal line results, and to prevent electromigration in the signal (wiring) lines.