The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 1990
Filed:
Aug. 30, 1988
Yuji Ando, Tokyo, JP;
Hideo Toyoshima, Tokyo, JP;
NEC Corporation, , JP;
Abstract
There is disclosed a resonant-tunneling bipolar transistor with a quantum-well comprising an inversion forming layer of an n-type gallium arsenide which is in contact with a first potential barrier layer of an undoped aluminum gallium arsenide partially defining the quantum-well, so that a two-dimensional hole gas layer serving as a base region takes place at the interface between the inversion forming layer and the first potential barrier layer due to differences in electron affinity and in the sum of electron affinity and energy bandgap upon application of an appropriate biasing voltage, thereby producing hot electrons injected from an emitter region through the quantum-well into the base region by the agency of a resonant-tunneling phenomenon.