The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 1990
Filed:
Aug. 24, 1989
Kabushiki Kaisha Toyota Chuo Kenkyusho, Aichi, JP;
Abstract
A compound semiconductor device comprises a substrate formed from a single crystal of silicon, a layer of an insulator formed on a portion of a surface of the substrate, at least one layer of a high resistance compound semiconductor formed on the insulator layer, and at least one layer of a single crystal of a compound semiconductor formed on a different portion of the substrate surface from the insulator layer. The device can be manufactured by forming an insulator layer on one portion of a surface of a single crystal silicon substrate, and growing a compound semiconductor by epitaxy on the insulator layer and on the different portion from the insulator layer. One of useful applications is a hybrid semiconductor device having a compound semiconductor formed from e.g. GaAs on a silicon substrate.