The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 1990
Filed:
Oct. 13, 1987
Peter Kuecher, Regensburg, DE;
Siemens Aktiengesellschaft, Berlin and Munich, DE;
Abstract
An improved planarization and reliability for low-impendance interconnects in multi-layer wiring of integrated semi-conductor circuits is provided. The circuit comprises at least two metallization levels composed of aluminum or of an aluminum contact, tungsten is employed as a via hole filler and metal silicides are employed as intermediate layers. The metallization pattern contains a nucleation layer preferably composed of titanium/titanium nitride as an under-layer for every metallization level, whereby the electron migration resistance of the aluminum layers is enhanced and a layer preferably composed of molybdenum silicide is used as a cover layer for every metallization level, thereby improving the low-impedance of the metallization. The sandwich-like metallization structure improves the planarity and the thermal stability of the circuit. Since the number of metallization levels is arbitrary, the present invention can be used for VLSI circuits.