The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 1990
Filed:
Sep. 01, 1989
Applicant:
Inventors:
Yasuhiro Fukuda, Tokyo, JP;
Shooji Kitazawa, Tokyo, JP;
Assignee:
Oki Electric Industry Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 238 ; 357 2311 ; 357 2313 ; 357 51 ;
Abstract
In a semiconductor device having an external input terminal, a first insulated-gate field-effect transistor formed on a semiconductor substrate, and having a gate connected to the input terminal, and a second insulated-gate field effect transistor having a drain connected to the gate of the first insulated-gate field-effect transistor, and having a gate and source connected to a reference voltage source, the ratio W/L of the channel width W to the channel length L of the second insulated-gate field effect transistor is not less than 12.