The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 1990
Filed:
Sep. 26, 1988
Kazuo Watanabe, Kanagawa, JP;
Yoshinori Sato, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
In an output buffer circuit for a memory including complementarily-connected P-channel and N-channel MOS transistors, a voltage is induced across the lead inductance whenever the load capacitance is charged or discharged through the lead inductance during the switching operation of the buffer circuit. This induced voltage changes the ground level or the supply voltage level, and results in a problem such that data signals read from the memory are distorted. To overcome this problem, one of the two MOS transistors through which an electric charge is charged or discharged is divided into two MOS transistors of a small size, and the data signal is applied to one of the divided MOS transistors directly and to the other thereof through a delay element so that the peak of the induced voltage is lowered without increasing the access time of the memory.