The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 1990
Filed:
Oct. 13, 1988
Akihiko Mochizuki, Tokyo, JP;
Hideyo Iida, Tokyo, JP;
Taiyo Yuden Co., Ltd., , JP;
Abstract
An ion sensor includes an ion sensitive membrane formed from a vinyl polymer based compound containing a hydroxyl and/or carboxyl group. The membrane is provided on an extended gate electrode on a gate electrode of a field-effect type transistor. The ion sensor also includes a reference electrode arranged in opposition to the extended gate electrode. The extended gate electrode and reference electrode are formed on a substrate different from the substrate on which the field-effect type transistor is formed. A divided part for an ion sensor is also provided and includes the portions of the ion sensor discussed above except for the reference electrode. The divided part is used with a separate reference electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile