The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 1990
Filed:
Apr. 08, 1988
Applicant:
Inventors:
Assignee:
Nissan Motor Company, Limited, Yokohama, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 42 ; 357 64 ; 357 16 ; 357 86 ;
Abstract
In order to improve latchup withstanding capability, a CMOS device is provided with at least one recombination layer which is buried in either or both substrate regions of a pMOS and a nMOS at such a position that a depletion layer formed at a pn junction between both substrate regions of the pMOS and nMOS does not reach the recombination layer. The recombination layer is a polycrystalline silicon or amorphous silicon layer having plentiful carrier recombination centers, or a layer having plentiful traps formed by ion implantation, or a layer of a compound semiconductor having a small band gap.