The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 1990
Filed:
Jun. 02, 1989
Applicant:
Inventors:
Brian G Bagley, Watchung, NJ (US);
Thomas J Gmitter, Lakewood, NJ (US);
Eli Yablonovitch, Leonardo, NJ (US);
Assignee:
Bell Communications Research, Inc., Livingston, NJ (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; B05D / ;
U.S. Cl.
CPC ...
437243 ; 437225 ; 437228 ; 437231 ; 437235 ; 437980 ; 427 96 ; 4271262 ; 357 72 ; 357 73 ;
Abstract
A method of passivating GaAs and InGaAs by growing on the GaAs or InGaAs used for semiconducting devices a surface film of glassy As.sub.2 S.sub.3 which acts as a passivating layer. The film growth is preferably done by precipitating As.sub.2 S.sub.3 from a solution containing NH.sub.4 OH, so as to make it basic, and then annealing the precipitated film at a temperature between the glass transition temperature (200.degree. C.) and the melting point (315.degree. C.) of As.sub.2 S.sub.3.