The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 1990
Filed:
Jul. 21, 1989
Heinrich Schlangenotto, Neu-Isenburg, DE;
Wolf-Dieter Nowak, Frankfurt, DE;
Hermann Berg, Eppstein, DE;
Licentia Patent-Verwaltungs-GmbH, Frankfurt am Main, DE;
Abstract
The invention relates to a gate turn-off thyristor which includes, per unit cell, a cathode-side emitter strip and two anode-side spaced emitter strips which overlap in position with the edge of the cathode-side emitter strip. In such a GTO thyristor, the maximum disconnectable anode current greatly decreases during turn-off with increasing voltage rise rate, since the electrical fields developing in the non-regenerative transistor region centered underneath the cathode-side emitter strip are too high. Reduction of the field intensity occurring in the non-regenerative transistor region and thus reduction in the decrease of the maximum disconnectable anode current is realized, according to the invention, in that a p-type zone is disposed between the two anode-side emitter strips to dynamically limit the electrical field, with this p-type zone injecting holes to a lesser degree than the adjacent emitter strips and essentially only during turn-off of high currents.