The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 1990
Filed:
Jun. 30, 1988
Applicant:
Inventors:
Yuichi Matsushima, Tanashi, JP;
Kazuo Sakai, Tokyo, JP;
Shigeyuki Akiba, Tokyo, JP;
Katsuyuki Utaka, Musashino, JP;
Assignee:
Kokusai Denshin Denwa Kabushiki Kaisha, Tokyo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 17 ; 357 16 ; 357-4 ;
Abstract
An infrared emitting device for use in the 2 to 3 .mu.m region, which is low in the threshold current and operates over a wide temperature range. In accordance with the present invention, an InP substrate is employed in place of GaSb substrate and InAs substrate heretofore employed for the 2 to 3 .mu.m infrared semiconductor lasers. Moreover, as active layers or clad layers, one of more semiconductor layers are employed which differ in lattice constant from the InP substrate.