The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 1990
Filed:
Jul. 25, 1988
Susumu Yoshikawa, Yokohama, JP;
Shizuo Sawada, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A first insulation layer is formed on a semiconductor substrate, and a first conductive layer is formed on the first insulation layer. A second insulation layer is formed on the first conductive layer and the first insulation layer, and a first contact hole, having a width greater than that of the first conductive layer, is formed in the second insulation layer, at a position corresponding to the first conductive layer. A second conductive layer, having a width greater than that of the first contact hole, is formed on the second insulation layer and in the first contact hole, and is formed in contact with the upper and side surfaces of the first conductive layer located inside the second contact hole. A third insulation layer is formed on the second conductive layer and the second insulation layer, and a second contact hole, having a width less than that of the second conductive layer, is formed in the third insulation layer, at a position corresponding to the second conductive layer. A third conductive layer, having a width greater than that of the second contact hole but less than that of the second conductive layer, is formed on the third conductive layer and in the second contact hole. The first conductive layer is electrically connected to the third conductive layer.