The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 1990
Filed:
Mar. 11, 1988
Applicant:
Inventors:
Masafumi Sano, Kawasaki, JP;
Katsuji Takasu, Asaka, JP;
Hisanori Tsuda, Atsugi, JP;
Yutaka Hirai, Tokyo, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357-4 ; 357 16 ; 357 56 ; 357 232 ; 357 231 ; 357 58 ; 357-2 ; 357 55 ;
Abstract
A thin film mesa type FET having a gate electrode formed on a substrate. An insulating thin film layer is formed on the gate electrode. A multilayer structure is formed on the insulating thin film layer by alternately laminating a number of non-monocrystalline semiconductor material layers and a number of non-monocrystalline insulating material layers. The thickness of the semiconductor layers is 5 to 500 .ANG..