The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 1990
Filed:
Oct. 07, 1983
Alain Boudou, Vert, FR;
Jean-Claude Marchetaux, Paris, FR;
Bull S.A., Paris, FR;
Abstract
A method of fabricating a resistor in a polycrystalline semiconductor material includes rendering the material conductive by a heavy doping implantation of ions which are electrically active with respect to the material. Ions which are electrically inactive, for example, argon ions, are then implanted in an area of the material with a concentration that is controlled to form a resistor having a desired resistance value. The method permits the precise and accurate control of the fabrication of load resistors for logic circuits within a very wide resistance range, and the resulting resistance values are a linear function of the concentration of the inactive ions.