The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 1990
Filed:
Jun. 19, 1989
Yves Thenoz, Grenoble, FR;
Francois Roy, Grenoble, FR;
Thomson-CSF, Puteaux, FR;
Abstract
The disclosed photosensitive matrix comprises, in a standard way, a P type semiconductor substrate, an N type channel layer separated by narrow insulating zones into a plurality of columns and, on a thin layer of insulating oxide placed on the channel layer, a network of transfer gates extending perpendicularly to the insulating zones, dividing the columns into a large number of 'pixels'. According to the invention, the matrix has, between the substrate and the channel layer, a weakly doped P type base layer, in which are buried anti-blooming diodes consisting of a narrow, strongly doped N type drain extending in a direction parallel to the insulation zones. Beneath the drain, there is a strongly doped, P type protective screen. The arrangement gives an optical aperture of the matrix close to unity and a spectral response that is improved towards the red side of the spectrum owing to the thickness of the base layer.