The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 1990
Filed:
Oct. 25, 1988
Ichiro Tomioka, Hyogo, JP;
Masahiro Ueda, Hyogo, JP;
Takahiko Arakawa, Hyogo, JP;
Toshiaki Hanibuchi, Hyogo, JP;
Yoshihiro Okuno, Hyogo, JP;
Mitsubishi Denki Kkabushiki Kaisha, Tokyo, JP;
Abstract
An inverter circuit (I.sub.3) is disclosed which includes a P-channel MOSFET (3) and a N-channel MOSFET (4) connected in series between a power supply (V.sub.DD) and a ground (GND). The inverter circuit further includes a P-channel MOSFET (5) and a N-channel MOSFET (6) connected in parallel between the gates of the FETs (3) and (4). The FETs (3) and (4) have their gates connected to receive testing mode signals (T.sub.E). In a testing mode operation, the FET (6) is rendered conductive to allow an input signal to be applied to the gate of the FET (4) through the FET (6). The FET (4), having an on-resistance lower than the FET (3), is driven into conduction in response to the output signal applied through the FET (6), thereby providing a slowly rising output signal. The slow rising output signal is free from undershoot or ringing.