The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 1990
Filed:
Sep. 22, 1988
Applicant:
Inventors:
Gary A Pollock, Canoga Park, CA (US);
Kim W Mitchell, Granada Hills, CA (US);
James H Ermer, Burbank, CA (US);
Assignee:
Atlantic Richfield Company, Los Angeles, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
136265 ; 136260 ; 136264 ; 437-5 ; 427 76 ; 357 30 ;
Abstract
A structure for, and method of making, thin films of Group I-III-VI compound semiconductors such as copper indium diselenide for use in heterojunction photovoltaic devices fabricated on metal substrates. An interfacial film containing gallium is first deposited upon the substrate. Thereafter, copper and indium films are deposited and the resulting stacked film is heated in the presence of a source of selenium to form copper indium diselenide semiconductor material with improved adhesion to the substrate and improved performance.