The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 1990
Filed:
Dec. 21, 1988
Hideyuki Kondo, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
The semiconductor device provided with a MIS capacitor in which an oxidation-resist film to be used for forming a field oxide film partly buried in a semiconductor by means of the selective oxidation technique is employed as a dielectric. A peripheral edge portion of the oxidation-resist film is turned up at a bird's-beak-shaped edge portion of the field oxide film, so that a gap space is produced between the peripheral edge portion of the oxidation-resist film and the bird's-beak-shaped edge portion of the field oxide film. An insulator layer is formed at the peripheral edge portion of the oxidation-resist film. An upper conductor layer of the MIS capacitor provided on the oxidation-resist film is elongated on this insulator layer.