The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 1990
Filed:
Jun. 09, 1988
Paul P Webb, Beaconsfield, CA;
RCA Inc., Vaudreuil, CA;
Abstract
The invention relates to an avalanche photodetector having a charge-multiplication region which is spatially separated from the detector surface. This photodetector includes a light-absorptive region, an active region overlying the absorptive region forming a heterojunction therebetween. The photodetector includes a central zone which has a greater concentration of conductivity modifiers than the remainder of the active region and is located in the active region extending into the absorptive region. A cap region overlies the active region and has the opposite conductivity type. The cap region extends a greater distance in the lateral direction than the central zone. A photodetector having a central zone extending across the heterojunction between the active region and light absorptive region have exhibited response times comparable with those of photodetectors having a quaternary layer located between the active region and the absorptive region. However, the photodetector of the present invention does not require the hard-to-grow quaternary layer.