The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 1990
Filed:
Oct. 29, 1986
Applicant:
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437183 ; 437159 ; 437196 ;
Abstract
A semiconductor device comprises a semiconductor substrate in which a plurality of semiconductor regions are formed, a front surface electrode in contact with the region, and a back surface electrode consisting of a gold alloy layer and a silver layer. After formation of the front surface electrode, the back side of the substrate is polished. Then, the gold alloy layer and the silver layer are formed in succession on the polished back surface of the substrate.