The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 1990
Filed:
May. 19, 1987
Bantval J Baliga, Schenectady, NY (US);
Deva N Pattanayak, Schenectady, NY (US);
General Electric Company, Schenectady, NY (US);
Abstract
A monolithically integrated reverse conducting lateral insulated gate semiconductor device includes an inherent four layer structure which supplies a sufficient base drive to turn on an inherent lateral transistor under forward bias conditions. Under reverse bias conditions, an inherent five layer structure is activated to provide for high current density low voltage reverse conduction in the device. Forward and reverse current flow can be interrupted by the application of an appropriate bias to the same insulated gate electrode. The disclosed semiconductor device achieves improved current density and concomitantly reduced cell size.