The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 1990
Filed:
Feb. 01, 1988
Applicant:
Inventor:
Gregory A Schrantz, Melbourne, FL (US);
Assignee:
Harris Corporation, Melbourne, FL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 29 ; 437 41 ; 437 56 ; 437152 ; 437154 ; 437160 ; 437162 ; 357 22 ; 357 42 ;
Abstract
A method of fabricating I.sup.2 JFETs including separately and in combination out-diffusion of impurities from doped source and drain contact material to product self-aligned source and drains; using the source and drain contacts as mask to form a self-aligned top gate spaced from the source and drain; and dual ion implantation of the channel for increasing radiation hardness.
Schrantz, Gregory. (1990). Ion implanted jfet with self-aligned source and drain (U.S. Patent No. 4912053). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4912053
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile