The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 1990
Filed:
Jun. 22, 1987
Christopher E Osuch, Morris County, NJ (US);
Michael J McFarland, Somerset County, NJ (US);
Hoechst Celanese Corporation, Somerville, NJ (US);
Abstract
Photoresist compositions suitable for deep UV and excimer laser lithography are disclosed that are mixtures of a photoacid and a polymer having imide residues to which acid labile groups are attached. The imide group ##STR1## can be blocked with certain groups, X, to form compounds containing the structure ##STR2## which have solubility properties different from the unblocked imide. These groups, X, can be cleaved by acid under the proper conditions to regenerate the unblocked imide. Where the imide group is incorporated in a polymer, the polymer with blocked imide groups can be made to function as a resist when compounded with a substance capable of forming an acid upon exposure to radiation. Preferred polymers are those in which at least 80% of the imide groups are blocked. When less than 50% of the imide groups are blocked, performance in a photoresist becomes unacceptable. When the special T-shaped profile needed for the metal lift-off method is required, at least about 50% of the imide groups should be blocked but not more than about 75%.