The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 1990
Filed:
Feb. 07, 1989
Morito Matsuoka, Katsuta, JP;
Kenichi Ono, Mito, JP;
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Abstract
A thin film forming apparatus comprises a plasma generating chamber into which is introduced a gas to generate plasma therein; a microwave introduction window connected to the plasma generating chamber for introducing the microwave into the latter, a first target and a second target made of materials to be sputtered and disposed at both end portions of interior of the plasma generating chamber, respectively, at least one of the first and second targets being in the form of a tube, at least one power supply for applying a negative voltage to the first and second targets, magnetic field producing means for producing the magnetic field and the magnetic flux leaving one of the first and second targets and entering the other, and a specimen chamber communicated to the plasma generating chamber and having a substrate holder installed therein. High-density ECR plasma generated within the plasma generating chamber sputters the targets so that the sputtered target materials are deposited on a substrate to form a thin film. It is also possible to extract ions in plasma by incorporating an ion extraction mechanism at the lower end of the plasma generating chamber.