The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 1990
Filed:
Feb. 24, 1989
Cornelis D Hartgring, Eindhoven, NL;
U.S. Philips Corp., New York, NY (US);
Abstract
A C-MOS semiconductor memory circuit includes a read amplifier and a tristate bus driver. The read amplifier is a two stage amplifier. The bit lines in the memory are connected via P-MOS pull-up transistors to the supply voltage. The logic low level is 1 Volt below the supply voltage. In order to bring the input signals for the difference amplifier at a most sensitive and fast level, a d.c.-shifting amplifier of the 'emitter follower' type is connected between each input thereof and the associated bit line. The difference amplifier and the two follower amplifiers are activated only for a short period of time by means of a selection signal which gives a strong restriction in the power dissipation. The tristate driver comprises a push-pull output stage and an inverting AND gate which is controlled by the output of a difference amplifier and by an equalization signal which is also applied to the difference amplifier and therefore is of a simple design and gives only a low signal delay.