The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 1990
Filed:
Feb. 11, 1988
Tatsuo Okamoto, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device comprises a silicon substrate (1) formed with impurity diffusion layers (5, 9) in a region defined by insulating films (2a, 2b) for separating elements and an aluminum alloy film (11) for electrode interconnection having a contact hole portion 7 whose bottom is electrically in contact with the impurity diffusion layers (5, 9). A titanium silicide (TiSi.sub.2) film (4) is deposited on the surfaces of the impurity diffusion layers (5, 9) to reduce sheet resistivity thereof as well as reduce contact resistance between the same and the aluminum alloy film (11). A molybdenum silicide (MoSi.sub.2) film (8) is further formed thereon to prevent the TiSi.sub.2 film (4) from corrosion in removal of an oxide film through etching, while a titanium nitride (TiN) film (10) is formed thereon to prevent thermal reaction of the aluminum alloy film (11) and the MoSi.sub.2 film (8).