The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 1990
Filed:
Jul. 16, 1986
Shuichi Kameyama, Itami, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor device and a method of making a semiconductor device including a semiconductor substrate of p-type conductivity, a first semiconductor region of n.sup.+ -type conductivity selectively formed on the semiconductor substrate, a second semiconductor region of n-type conductivity formed insularly contacting on the first semiconductor region, a groove extending from a surface of the second semiconductor region spaced from the first semiconductor region to the vicinity of a surface of the first semiconductor region abutting the second semiconductor region, a conductive material charged into the groove, and a third semiconductor region of high impurity n-type conductivity disposed so as to connect a bottom of the groove with the surface of the first semiconductor region, whereby the conductive material in the groove and the third semiconductor region are used as low resistance current paths reaching from the surface of the second semiconductor region to the first semiconductor region.