The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 1990
Filed:
Nov. 13, 1987
Applicant:
Inventors:
Jhang W Lee, Mansfield, MA (US);
Richard E McCullough, Wrentham, MA (US);
Jack P Salerno, Waban, MA (US);
Assignee:
Kopin Corporation, Taunton, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437132 ; 148D / ; 148D / ; 148D / ; 148D / ; 148D / ; 156612 ; 156613 ; 437107 ; 437111 ; 437112 ; 437946 ; 437939 ; 437970 ; 437976 ;
Abstract
A GaAs containing nucleation layer is deposited upon Si, Ge/Si, or other single crystal substrate from triethyl gallium (TEG). Deposition from TEG allows a lower deposition temperature which provides a low level of substrate contamination and improved surface morphology.