The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 1990
Filed:
Dec. 22, 1988
Franco Bertotti, Milan, IT;
Paolo Ferrari, Gallarate, IT;
Mario Foroni, Valeggio sul Mincio, IT;
Maria T Gatti, Milan, IT;
Abstract
The collector area of a lateral PNP transistor may be incrementally increased during an electic testing step on wafer of an integrated circuit by purposely forming an auxiliary p-type diffused collector region having fractional dimensions near the primary collector region of the transistor and by permanently shorcircuiting the two regions by means of a 'Zener zapping' technique, by forcing a current through the inversely biased base-collector junction utilizing a suitable contact pad connected to the auxiliary collector region to create localized power dissipation conditions sufficient to melt the metal of the respective metal at the adjacent contacts and to form a permanent connection between the two metals. The technique is very useful for adjusting the value of the output current(s) in precision current generating circuits.