The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 1990
Filed:
Jan. 12, 1984
Applicant:
Inventors:
Madhukar B Vora, Los Gatos, CA (US);
Hemraj K Hingarh, San Jose, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 15 ; 357 59 ; 357 67 ;
Abstract
A Schottky diode is fabricated according to the following steps: forming a layer of metal-silicide on an underlying dielectric layer, forming a polysilicon layer on the upper surface of the metal-silicide layer, forming a second dielectric layer on the upper surface of the polysilicon layer and patterning the second dielectric layer to create a contact window through the second dielectric layer to an exposed surface region of the polysilicon layer, and forming a metal contact to the exposed surface region.