The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 1990
Filed:
Feb. 05, 1988
Applicant:
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 43 ; 357 46 ; 357 235 ; 357 42 ; 365190 ; 307446 ;
Abstract
A semiconductor device has a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type; an interconnection layer, containing an impurity of a second conductivity type, for connecting the first and second semiconductor regions; and a third semiconductor region of the second conductivity type which is formed in the first semiconductor region upon diffusion of the impurity from the interconnection layer to the first semiconductor region, the first and third semiconductor regions being adapted to form a p-n junction diode.