The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 1990
Filed:
Oct. 28, 1988
Hidetoshi Shinada, Kanagawa, JP;
Fuji Photo Film Co., Ltd., Kanagawa, JP;
Abstract
An optical semiconductor device of broad area structure comprising an active region positioned between a p-type semiconductor region having a stripe-like anode electrode and an n-type semiconductor region having a cathode electrode, the anode electrode having a broad stripe width in which the photon density is increased to amplify the light with the aid of injected into the active region dependent on the current density flowing between the anode and cathode electrodes, wherein the density distribution of the injected carriers exhibits Gauss distribution in the widthwise direction of the stripe width. Therefore, it is possible to supply such a current as to produce the density distribution of the injected carriers with no excess or shortage.