The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 1990
Filed:
Sep. 19, 1988
Michael Shur, Golden Valley, MN (US);
Regents of the University of Minnesota, St. Paul, MN (US);
Abstract
A radiation-emitting semiconductor device (i.e. an LED or laser) emits radiation produced by radiative recombination of electrons from a field induced two-dimensional (2-d) electron gas with holes from a field induced two-dimensional (2-d) hole gas. The device uses a narrower band semiconductor active layer sandwiched between two layers of a wider band semiconductor. Top and bottom gates are used to induce the electron and hole 2-d gasses in the active layer. N+ and P+ regions are used to contact the 2-d electron and hole gasses to provide separate biasing. The thickness of the active layer is such that a field induced PN junction or PIN structure is formed at which radiative recombination can occur.