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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 4905057 B1

PDFFull Text
Date of Patent:
Feb. 27, 1990

Filed:

Mar. 17, 1989

Semiconductor devices

Applicant:
Inventors:

Akio Ohishi, Tokyo, JP;

Takao Kuroda, Tokyo, JP;

Shinji Tsuji, Tokyo, JP;

Motohisa Hirao, Tokyo, JP;

Hiroyoshi Matsumura, Saitama, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:

Antonelli, Terry & Wands

Primary Examiner:

Andrew J James

Assistant Examiner:

David Soltz

Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
357 17 ; 357 16 ; 357 34 ; 372 44 ; 372 45 ; 372 46 ; 372 48 ;
Abstract

A semiconductor device such as a semiconductor laser device or a transistor which is small in both threshold current and leakage current and exhibits no increase with time in the threshold current and leakage current can be obtained by incorporating pnp or npn junctions in a buried layer which coats an active region containing InGaAsP, forming the mid layer of the junctions with InGaAsP, adjusting the conductivity type of the mid layer with an implanted ion and specifying the energy band width of a semiconductor constituting the mid layer.

Find Patent Forward Citations

Ohishi, Akio. (1990). Semiconductor devices (U.S. Patent No. 4905057). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4905057

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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