The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 1990

Filed:

Jun. 06, 1988
Applicant:
Inventors:

Michihiro Yamada, Hyogo, JP;

Hiroshi Miyamoto, Hyogo, JP;

Tadato Yamagata, Hyogo, JP;

Shigeru Mori, Hyogo, JP;

Tetsuya Aono, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ;
U.S. Cl.
CPC ...
3072962 ; 307304 ;
Abstract

A substrate bias circuit controls application of a conventional substrate charge pump to the substrate of a semiconductor integrated circuit to prevent latching up of parasitic transistors at the time of turn on of power to the integrated circuit. The substrate bias circuit comprises a filed effect transistor having its source and drain electrodes connected between substrate and charge pump. The gate electrode of the transistor is driven through an RC circuit by the power supply to turn on the transistor for a predetermined time period at the time power is initially applied to the integrated circuit. There is no latching up of the parasitic transistors because application of positive bias voltage to the substrate during turn-on is prevented.


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