The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 1990
Filed:
Jun. 30, 1989
Hans-Peter Zwicknagl, Stuttgart, DE;
Josef Willer, Oberschleissheim, DE;
Helmut Tews, Unterhaching, DE;
Siemens Aktiengesellschaft, Berlin and Munich, DE;
Abstract
A method for the manufacture of a planar, self-aligned emitter-base complex, whereby a semiconductor layer structure standard for hetero-bipolar transistors is first grown on a substrate, the base regions are subsequently etching through a mask technique and are provided with the base metallization and with a first dielectric layer and insulation implantations and spacers for electrical insulation of the base are manufactured, and, following thereupon, the emitter region is provided with the emitter metallization and with a third dielectric layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile