The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 1990
Filed:
Aug. 22, 1988
Richard D Blaugher, Pittsburgh, PA (US);
Joseph Buttyan, Wilkins Township, Alleghney County, PA (US);
John X Przybysz, Penn Hills, PA (US);
Westinghouse Electric Corp., Pittsburgh, PA (US);
Abstract
This is an improved method for providing silicon dioxide with openings which expose contact pad areas for connections to superconductor in the preparation of superconducting integrated circuits. It relates to the type of method which utilizes depositing of a silicon dioxide film on a substrate (including over superconductor conductor patterns on the substrate surface), placing a resist film on the silicon dioxide film, patterning the resist film to expose portions of the silicon dioxide, and reactive ion etching the exposed portions of the silicon dioxide film to expose contact pad areas of superconductor. The improvement utilizes an etchant gas consisting essentially of 50-95 volume percent nitrogen trifluoride and 5-50 volume percent rare gas (preferably about 77 volume percent nitrogen trifluoride, with argon or neon or mixtures thereof as the rare gas) for the reactive ion etching of the exposed portions of the silicon dioxide film. Thus a carbon-containig etchant is not used and polymer by-products of the etching process are essentially completely avoided.