The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 1990
Filed:
Sep. 28, 1988
Applicant:
Inventors:
Tetsushi Sekiguchi, Tokorozawa, JP;
Tetsuo Hamatani, Iruma, JP;
Hideo Ozawa, Kawagoe, JP;
Masao Takahashi, Tokyo, JP;
Assignee:
Nihon Kohden Corp, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 25 ; 357 2315 ; 357 52 ; 357 54 ;
Abstract
A field effect transistor for use as an ion sensor has a P-type silicon substrate on which are formed a source region and a drain region. An N-type isolation diffusion layer is formed on the outer peripheral surface of the silicon substrate and this diffusion layer is surrounded by an insulation layer. According to this arrangement, even when the potential of the electrolyte has been raised to a level which is positive with respect to the silicon substrate, an electrical isolation is established by the reverse dielectric strength exhibited by the P-N junction.