The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 1990
Filed:
May. 23, 1988
NEC Corporation, Tokyo, JP;
Abstract
A heterojunction transistor has a first semiconductor layer of a semi-insulating or a low impurity concentration, a second semiconductor layer formed on the first semiconductor layer and made of such a semiconductor material that, in cooperation with the first semiconductor layer, a first energy recess for electrons and a second energy recess for holes are respectively formed at the bottom of the conduction band and at the top of the valence band to constitute a conductive channel, a third semiconductor layer formed on the second semiconductor layer and forming a PN-junction with the upper surface of the second semiconductor layer to inject carriers into the conductive channel, a control electrode for applying an input signal to the third semiconductor layer, and a ground and an output electrode formed on the second semiconductor layer on the opposite sides of the third semiconductor layer.