The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 1990
Filed:
Oct. 21, 1988
Applicant:
Inventors:
Ara Chutjian, La Crescenta, CA (US);
Michael H Hecht, Los Angeles, CA (US);
Otto J Orient, Glendale, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; C23C / ;
U.S. Cl.
CPC ...
437239 ; 437225 ; 437228 ; 437930 ; 437936 ; 437235 ; 437238 ; 2504 / ; 250427 ; 20419232 ; 20419234 ;
Abstract
A method of effecting modifications at the surfaces of materials using low energy ion beams of known quantum state, purity, flux and energy. The ion beam is obtained by bombarding ion-generating molecules with electrons which are also at low energy. The electrons used to bombard the ion generating molecules are separated from the ions thus obtained and the ion beam is directed at the material surface to be modified. Depending on the type of ion generating molecules used, different ions can be obtained for different types of surface modifications such as oxidation and diamond film formation.