The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 1990
Filed:
Feb. 09, 1989
Hidenori Shimawaki, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method of selective epitaxial growth for compound semiconductor includes the steps of forming a layer of group IV element semiconductor, such as Ge, with a predetermined pattern on a compound semiconductor substrate and forming a compound semiconductor layer selectively on the compound semiconductor substrate by alternately supplying a gas of compound containing a group III or II element, such as trimethylgallium, triethylgallium and triisobutylaluminum, and a gas of compound containing a group V or VI element, such as AsH.sub.3, onto both surface of the layer of group IV element semiconductor and the compound semiconductor substrate. Another semiconductor layer of group IV element semiconductor or compound semiconductor may be formed on the layer of group IV element semiconductor by organometallic vapor phase epitaxy or MBE.