The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 1990
Filed:
Jun. 23, 1989
Harufusa Kondou, Hyogo, JP;
Masao Nakaya, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A method for producing a three-dimensional type semiconductor device comprises a first semiconductor integrated circuit layer comprising active regions, insulating layers, gate electrodes, and interconnection layers; an insulating layer formed thereon; and a second semiconductor integrated circuit layer comprising active regions, insulating layers, gate electrodes and interconnection layers. Active regions in the second layer are directly coupled to an interconnection layer, and active region and a gate electrode in the first layer, which are located immediately thereunder, by interlayer interconnections through a contact hole formed straight, so that a distance of each interlayer interconnection can be reduced.