The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 1990
Filed:
Jan. 23, 1989
Minoru Inoue, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A semiconductor device comprising a metallized layer formed on a silicon substrate, wherein said metallized layer is an aluminum alloy consisting essentially of aluminum, silicon and at least one element selected from the group consisting of titanium, vanadium, chromium, tungsten, and phosphorus the amount of silicon being 1.0% to 3.0% by weight, the amount of said selected element corresponding to the relative service life required of the metallized layer, said required service life being 10 times that of a metallized layer having the same composition as that of the above-mentioned metallized layer except for being free from said element, and the rest being aluminum. For example, the metallized layer may contain at least 0.04% and less than 0.10% by weight of titanium, 1.0% by weight of silicon, and the rest aluminum.