The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 1990
Filed:
Apr. 19, 1988
William E Horne, Renton, WA (US);
Arthur C Day, Renton, WA (US);
The Boeing Company, Seattle, WA (US);
Abstract
A film deposition system is provided for depositing a film of at least first and second materials onto a common target. This system includes a housing within which the common target is located and within which a high vacuum region may be formed. The system further includes first and second crucibles each containing respective first and second materials to be deposited; a heating element and/or cooling element for vaporizing the materials in each of the first and second crucibles, respectively; first and second nozzles for ejecting the vaporized material from the first and second crucibles into the high vacuum region to form non-ionized atomic clusters by adiabatic expansion with those clusters traveling in first and second directions, respectively, each of which are non-coincident with the common target; first and second electron strippers for converting a portion of those non-ionized clusters to ionize clusters of the first and second materials; first and second accelerators for accelerating the ionized clusters of the first and second materials; and first and second deflectors for deflecting the ionized clusters of first and second materials to third and fourth directions, respectively, each of which are coincident with the common target. By varying the percentage of non-ionized atomic clusters converted to ionized clusters, the rate of flow of the ionized clusters deposited upon the common material may be effectively instantaneously controlled to thereby deposit a film having a continuous and smoothly varying property.