The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 1990
Filed:
May. 24, 1988
Wilhelm Senske, Eschborn, DE;
Ekkehard Niemann, Maintal, DE;
Roland Herkert, Frankfurt am Main, DE;
Guido Blang, Brauneberg, DE;
Licentia Patent-Verwaltungs-GmbH, Frankfurt am Main, DE;
Abstract
A method of producing an electrophotographic recording material, in which an aluminum substrate is coated with a blocking layer. The blocking layer is coated with a layer of amorphous silicon by direct current magnetron cathode sputtering. At least one sputter target containing silicon is used, and a power density of from about 2.0 W/cm.sup.2 to about 30 W/cm.sup.2 is used for the sputtering. The sputtering is performed in an atmosphere containing hydrogen and an inert gas, with a total pressure of inert gas and hydrogen being in a range from about 1.times.10.sup.-3 to about 10.times.10.sup.-3 mbar. This produces a layer of amorphous silicon having a hydrogen content of more than 40 atom %, an inert gas content in a range of 0.01 to 10 atom %, and in which the relative peak heights of the low and high temperature peaks during hydrogen effusion are approximately equal. The amorphous silicon layer is then coated with a cover layer.