The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 1990
Filed:
May. 26, 1989
Applicant:
Inventors:
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156600 ; 156603 ;
Abstract
The invention provides a process for causing growth of single crystal from the junction of a single crystal/polycrystal joined body by a low-temperature heat treatment by making use of the solid-phase growth of crystal. The growth of single crystal can be accomplished staby, with high reliability and in a solid phase by producing a stage satisfies the conditions for abnormal grain growth only at the portion close to the junction, that is, a state in which the joined body is locally kept higher than the grain growth temperature, by making use of the temperature gradient at the junction or the corresponding concentration of the additive.