Semiconductor integrated circuit and manufacturing method therefor

Abstract

A method of manufacturing a semiconductor integrated circuit comprises the steps of: forming an epitaxial layer covering a semiconductor substrate and buried layers; forming isolation regions dividing the epitaxial layer into a plurality of islands; forming a lower electrode region of an MIS type capacitor in one of the islands; forming a base region of a vertical bipolar transistor simultaneously with or independently from the lower electrode in another island; depositing a thin dielectric layer of the MIS type capacitor on a portion of the lower electrode region; thereafter selectively diffusing impurities into the surface layer of the base region so as to form an emitter region of the vertical bipolar transistor; and forming an upper electrode of the MIS type capacitor on the thin dielectric layer.