The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 1990
Filed:
Jun. 27, 1988
Arthur H Lockwood, Goleta, CA (US);
Adela Gonzales, Santa Barbara, CA (US);
Amber Engineering, Inc., Goleta, CA (US);
Abstract
An improved system and method for annealing indium antimonide ion implanted junctions employing an open-tube benign annealing environment. A furnace having a hollow chamber therein is maintained continuously at a predetermined annealing temperature and wafers of indium antimonide to be annealed are inserted into the chamber through a resealable airlock at one end of the chamber. A source of molten indium saturated with antimony is provided within the chamber to maintain desired partial pressures of indium and antimony within the chamber. Hydrogen gas is continuously flushed through the chamber to purge contaminants and maintain the chamber at a desired slight overpressure over atmospheric. At the conclusion of annealing, the indium antimonide wafer is removed from the chamber into the airlock which is flushed with hydrogen gas. The wafer is allowed to cool to room temperature and removed from the airlock for subsequent processing steps.